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This version (11 Dec 2018 09:13) was approved by mmurnane.The Previously approved version (11 Dec 2018 09:04) is available.Diff

GATE DRIVER POWER MODULE - MICROSEMI IGBT

MICROSEMI IGBT Gate Driver MODULE Evaluation Board

Features

  • Half Bridge Topology with IGBT APTGT75A120T1G Power Device
  • 1200V, 50A, 20kHz
  • >100kV/us CMTI
  • 12V VIN supply
  • Independent High Side and Low Side PWM inputs (Single control with 70ns deadtime for testing)
  • 1xLT3999 + 1xADuM4135 for both High Side and Low Side
  • Full tested ‘Desat protection’
  • Low inductive and high current terminals for V+, V- and AC phase connection

Product Details

High power evaluation board, up to 1200V & 50A @ 20kHz switching frequency featuring the combo ADI ADuM4135 isolated gate driver + LT3999 isolated power supply controller + Microsemi IGBT power module in half bridge configuration.


Safety Notice

SAFETY NOTICE - This is a high Voltage Board 1200V. Only qualified person to test this device in a suitable Lab environment.


resources/eval/eval-microsemi-igbt-module.txt · Last modified: 11 Dec 2018 09:13 by mmurnane