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university:courses:alm1k:alm-lab-11m [07 Feb 2022 15:02]
Doug Mercer [Activity 11M: The Source follower (NMOS)]
university:courses:alm1k:alm-lab-11m [07 Feb 2022 15:45]
Doug Mercer [Procedure:]
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-From the equation we can see that in order to obtain a gain close to one we can either increase R<​sub>​L</​sub>​ or decrease r<​sub>​s</​sub>​. We also know that r<​sub>​s</​sub>​ is a function of I<​sub>​D</​sub>​ and that as I<​sub>​D</​sub>​ increases r<​sub>​s</​sub>​ decreases. Also from the circuit we can see that I<​sub>​D</​sub>​ is related to R<​sub>​L</​sub>​ and that as R<​sub>​L</​sub>​ increases I<​sub>​D</​sub>​ decreases. These two effects work counter to each other in the simple resistive loaded ​emitter ​follower. Thus to optimize the gain of the follower we need to explore ways to either decrease r<​sub>​s</​sub>​ or increase R<​sub>​L</​sub>​ without effecting the other. It is important to remember that in MOS transistors I<​sub>​D</​sub>​ = I<​sub>​S</​sub>​ ( I<​sub>​G</​sub>​ = 0 ).+From the equation we can see that in order to obtain a gain close to one we can either increase R<​sub>​L</​sub>​ or decrease r<​sub>​s</​sub>​. We also know that r<​sub>​s</​sub>​ is a function of I<​sub>​D</​sub>​ and that as I<​sub>​D</​sub>​ increases r<​sub>​s</​sub>​ decreases. Also from the circuit we can see that I<​sub>​D</​sub>​ is related to R<​sub>​L</​sub>​ and that as R<​sub>​L</​sub>​ increases I<​sub>​D</​sub>​ decreases. These two effects work counter to each other in the simple resistive loaded ​source ​follower. Thus to optimize the gain of the follower we need to explore ways to either decrease r<​sub>​s</​sub>​ or increase R<​sub>​L</​sub>​ without effecting the other. It is important to remember that in MOS transistors I<​sub>​D</​sub>​ = I<​sub>​S</​sub>​ ( I<​sub>​G</​sub>​ = 0 ).
  
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university/courses/alm1k/alm-lab-11m.txt · Last modified: 07 Feb 2022 15:45 by Doug Mercer